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  • Ultraviolet Sensor

    Germany SGLUX UV Photodiode SG01D-5LENS

    Product Model:SG01D–5LENS

    Brand:德国SGLUX

    Product Category: UV sensor



    Germany SGLUX UV Photodiode SG01D-5LENS Description About Material Silicon Carbide (SiC)

    SiC has unique characteristics, can withstand high-intensity radiation, is almost insensitive to visible light, generates low dark current, fast response speed and low noise. These properties make SiC a good material to use for visible blind zone semiconductor UV detectors. SiC detectors can operate at temperatures up to 170°C (338 °F). The temperature coefficient of the signal (responsivity) is also low,

     

    German SGLUX UV Photodiode SG01D-5LENS Options

    SiC photodiodes are available in seven different effective sensitive areas, from 0.06 mm2 to 36 mm2. The standard version is a broadband UVA-UVB-UVC.

    The four filtered versions result in a tighter sensitization range. All photodiodes have a sealed metal housing (TO type), a TO18 housing with a diameter of 5.5mm or a TO5 housing with a diameter of 9.2mm. Further options are 2 pins (1 insulated, 1 grounded) or 3 pins (2 insulated, 1 grounded).



    Germany SGLUX UV photodiode SG01D-5LENS features

    Broadband UVA UVB UVC, PTB reported chip high stability for flame detection

    Radiation sensitive area A = 11,0 mm2
    TO5 sealed metal housing and condenser, 1 insulated pin and 1 ground pin

    10 µW/cm2 peak radiation produces approximately 350 nA of current


    Germany SGLUX UV photodiode SG01D-5LENS parameters

    Parameters

    Symbol

    Numerical

    Unit

    spectral characteristics

    Typical responsivity at peak wavelength

    S

    0,130

    aw

    Wavelength of spectral responsivity

    Λ

    280

    nm

    Response wavelength range (S = 0,1 * Smax)

    -

    221-358

    nm

    Visible blind area (Smax/S>405nm)

    VB

    > 1010

    -

    General characteristics (T = 25°C)

    Sensitive area (chip size = 0,50 mm2)

    A

    11,0

    mm2 

    Dark current (1V reverse bias)

    Id

    1,7

    fa

    Capacitance

    C

    125

    pF

    Short circuit (10 µW/cm2 peak)

    Io

    350

    nA

    temperature coefficient

    Tc

    %/K

    Rating

    Working temperature

    Topt

    -55...+170

    °C

    Storage temperature

    Tstor

    –55 … +170

    °C

    Welding temperature (3s)

    Tsold

    260

    °C

    Reverse voltage

    VRmax

    20

    V






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